DYNAMIC PERFORMANCE SIMULATION OF ALGANGAN HIGH ELECTRON MOBILITY TRANSISTORS

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Sinopsis de DYNAMIC PERFORMANCE SIMULATION OF ALGANGAN HIGH ELECTRON MOBILITY TRANSISTORS

AbstractGaN based devices have reached a point in terms of processing maturity where the favorable wideband gap related properties can be implemented in several commercial and military applications However long term reliability continues to affect large scale integration of such devices specifically the potential of AlGaNGaN High Electron Mobility Transistors HEMTs due to the indefinite nature of defects in the structure and mechanisms of performance degradation relevant to such defectsRecent efforts have begun to concentrate more on the bulk properties of the GaN buffer on which the heterostructure is grown and how defects distributed in the buffer can affect the performance under various operating schemes This dissertation discusses numerical simulator based investigation of the numerous possibilities by which such point defects can affect electrical behavior For HEMTs designed for satellite communication systems proton irradiation results indicate changes in the device parasitics resulting in degradation of RF parameters Assumption of such radiation damage introducing fast traps indicate severe degradation far exceeding experimental observation For power switching applications the necessity of accurately capturing asgrown defects was realized when modeling current relaxation during bias switching Ability to introduce multiple trap levels in the material bulk aided in achieving simulation results replicating experimental results more accurately than published previously Impact of factors associated with such traps either associated with discrete energy levels or bandlike distribution in energy on the nature of current relaxation characterized by its derivative has been presentedDissertation Discovery Company and University of Florida are dedicated to making scholarly works more discoverable and accessible throughout the world This dissertation Dynamic Performance Simulation of AlGaNGaN High Electron Mobility Transistors by Shrijit Mukherjee was obtained from Univ
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dynamic performance simulation of algangan high electron mobility transistors-9780530005881

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